介绍氮化镓（GAN）以及TriQuint半导体的解决方案

document.getElementById("video").style.height=document.getElementById("video").scrollWidth*9/16+"px"</script> <p class="text-muted clearfix"> <span class="pull-right">3227 观看</span> 上传于 2013-03-21 16:57:49 <div class="tag-terms"><span class="tag-label">标签：</span><a href="//www.qjumbo.com/rf/tag/%E6%B0%AE%E5%8C%96%E9%95%93/" title="氮化镓" target="_blank">氮化镓</a><a href="//www.qjumbo.com/rf/tag/GAN/" title="GAN" target="_blank">GAN</a></div> <p>视频将介绍氮化镓技术带來的的优势和其将推动的应用，还讨论TriQuint半导体公司的氮化镓产品解决方案。</p> </div> <div class="main-block1"> <div class="panel1 panel-default1 panel-main1"> <div class="panel-heading1"> <span class="pi-icon-dot-o1"></span> <div class="pi-panel-heading-inner1"> 继续阅读 </div> </div> <div class="panel-body1"> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="//www.qjumbo.com/rf/article/id-340314" title="GaN功放与大规模MIMO阵列协同的6G基站高能效覆盖路径">GaN功放与大规模MIMO阵列协同的6G基站高能效覆盖路径</a> </div> <div class="clearfix article-desc1"> <p> GaN功放与大规模MIMO阵列协同需平衡功放效率与通道幅相一致性。数字预失真辅助功放工作在近饱和区，GaN在回退区效率衰减平缓。幅相校准补偿通道离散性和温度漂移，混合波束成形兼顾灵活性与功耗。优化框架在覆盖与容量约束下最小化总功耗，动态偏置和通道关断进一步节能。测试表明该协同在覆盖与能效间取得平衡。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="//www.qjumbo.com/rf/article/id-340300" title="GaN射频器件高功率工况下沟道温度预测与散热路径协同优化">GaN射频器件高功率工况下沟道温度预测与散热路径协同优化</a> </div> <div class="clearfix article-desc1"> <p> GaN射频器件高功率工况下沟道温度预测需建模从有源区到散热器的多层级热阻路径，碳化硅衬底和界面热阻是关键因素。预测采用热阻网络与有限元仿真结合，散热优化从器件布局、衬底减薄、焊接材料和系统散热协同推进。温度间接测量通过电学参数与外壳温度融合提高可靠性。测试标定热阻参数并验证优化效果，为高功率密度下的可靠运行提供保障。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="//www.qjumbo.com/rf/article/id-340205" title="氮化镓(GaN)车载OBC：高功率密度与双向充电协议演进解析">氮化镓(GaN)车载OBC：高功率密度与双向充电协议演进解析</a> </div> <div class="clearfix article-desc1"> <p> 氮化镓（GaN）器件凭借高频低损与双向可控特性，正推动车载充电机（OBC）向高功率密度与双向充电协议演进。传统硅基OBC受限于物理瓶颈，难以满足新能源汽车轻量化与车网互动需求。GaN器件将OBC功率密度提升至4.8kW/L以上，效率超96.5%，实现双向能量调度，成为新一代车载电能转换核心。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="//www.qjumbo.com/rf/article/id-339919" title="面向6G的氮化镓射频前端模组深度剖析：共存干扰抑制、天线一体化与热管理">面向6G的氮化镓射频前端模组深度剖析：共存干扰抑制、天线一体化与热管理</a> </div> <div class="clearfix article-desc1"> <p> 面向6G的氮化镓射频前端模组需协同解决共存干扰抑制、天线一体化与热管理。谐波控制与动态偏置抑制干扰，点点taptap安卓上天线减少馈线损耗，高导热衬底及散热布局控制热通量。三方面耦合设计是高频段工程落地的关键。 </p> </div> </div> <div class="article-box1"> <div class="article-title-box1"> <a class="title" target="_blank" href="//www.qjumbo.com/rf/article/id-339864" title="氮化镓功率器件在6G基站射频系统中的性能与应用探索">氮化镓功率器件在6G基站射频系统中的性能与应用探索</a> </div> <div class="clearfix article-desc1"> <p> 氮化镓功率器件凭借高输出功率密度、高效率及宽带工作能力，支撑6G基站毫米波频段的高功率生成与主动天线阵列集成，通过倒装点点taptap安卓封装与硅基工艺降低互连损耗与制造成本。 </p> </div> </div> </div> </div> </div> <script> $("video").bind("contextmenu",function(){//取消右键事件 return false; }); </script><script type="text/javascript"> window.onload = function() { var user; $.ajax({ cache: false, async: false, dataType: 'json', type: 'get', url: '/system/index/user', success: function (e) { user = e; } }); insertAccessRecord({ 'page' : 'video-detail', 'action' : 'view', 'type' : 'video', 'param1' : '射频技术', 'param2' : '介绍氮化镓（GAN）以及TriQuint半导体的解决方案', 'uid' : user ? 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